Technology - Fabricating Photonics Structure Conductive Pathways

Fabricating Photonics Structure Conductive Pathways

This technology improves the photodetector functionality in photonic integrated circuits by significantly reducing extended defects typically associated with buffer layers.

Background:

Photonics is the science of manipulating light to perform electronic and other functions while making use of light’s advantages, including higher speed and parallel data transmission. Photonic integrated circuits (PICs) integrate optical components such as lasers, modulators, waveguides, and detectors on a single substrate. This offers a compact and efficient solution for managing optical signals. Integrating various optical components on a single chip significantly enhances the performance, scalability, and efficiency of optical systems. The functionality of optoelectrical systems can be further improved by integrating field-sensitive materials and field-generating structures into the design.

Technology Overview:

This technology improves photodetector functionality in PICs, which directly influences the overall effectiveness of data transmission systems. The method precisely deposits germanium in trenches followed by an annealing process to reduce defects and enhance material properties. This process significantly reduces extended defects typically associated with buffer layers, which reduces reverse leakage current and improves efficiency and detection in photodetectors. It also improves control over the growth environment of Germanium, which facilitates direct integration on silicon without the intermediate buffer. This improves the structural quality of the Germanium and directly enhances performance by reducing defect-related issues and improving light absorption efficiency.
Photo for reference only, not a depiction of the invention.

Advantages:

•    Improves photodetector functionality in PICs.
•    Reduces extended defects typically associated with buffer layers.
•    Enhances material properties.
•    Reduces reverse leakage current.
•    Improves control over the growth environment of germanium.
•    Improves light absorption efficiency.

Applications:

The primary application for this technology is the manufacture of photonic integrated circuits (PICs).

Intellectual Property Summary:

Patent application filed: US20220229228A1, “Fabricating photonics structure conductive pathways” (https://patents.google.com/patent/US20220229228A1/en?oq=17%2f596%2c775).

Stage of Development:

TRL 6 - Technology demonstrated in relevant environment

Licensing Status:

This technology is available for licensing.


Patent Information: