Gate All-Around Field Effect Transistors Including Quantum-based Features
A device that increases computational processing power in a single Gate All-Around Field Effect Transistor including quantum-based features.
Circular multi-channel (e.g., three-state, four-state) Gate All-Around Field Effect Transistors (GAAFET) utilize quantum-based features or layers therein to increase computational processing during operation....
Inventor(s): Supriya Karmakar
Keywords(s): #SUNYresearch, Technology
Category(s): Technology Classifications > Nanotechnology, Campus > Farmingdale State College