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Gate All-Around Field Effect Transistors Including Quantum-based Features

A device that increases computational processing power in a single Gate All-Around Field Effect Transistor including quantum-based features. Circular multi-channel (e.g., three-state, four-state) Gate All-Around Field Effect Transistors (GAAFET) utilize quantum-based features or layers therein to increase computational processing during operation....
Published: 6/22/2020   |   Inventor(s): Supriya Karmakar
Keywords(s): #SUNYresearch, Technology
Category(s): Technology Classifications > Nanotechnology, Campus > Farmingdale State College

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