Ga₂O₃ Vertical MOSFET for Enhanced Power Management

Background:

This technology addresses the need for high-voltage power devices suitable for grid and traction applications, overcoming the limitations of traditional silicon-based devices. Gallium oxide (Ga₂O₃), a wide-bandgap semiconductor, enables efficient, high-voltage operation with a reduced size and improved energy efficiency. The invention features a vertical trench MOSFET design with a unique in-situ Mg-doped current blocking layer, enabling robust performance for high-voltage applications.

Technology Overview:

This University at Buffalo and Ohio State University technology is a vertical trench MOSFET built on gallium oxide (Ga₂O₃) with a novel in-situ Mg-doped current blocking layer (CBL). This design overcomes challenges in vertical power device development, particularly the lack of shallow acceptors in Ga₂O₃. The technology enables higher voltage operation with increased efficiency, robustness, and thermal performance, making it suitable for high-power applications.

Advantages:

• High voltage operation enabled by Ga₂O₃’s large bandgap.
• Enhanced energy efficiency and temperature tolerance.
• Robust current blocking layer ensuring stable operation in vertical power devices.
• Potential for more compact, efficient power electronics systems.

Applications:

• High voltage DC converters for grid applications.
• Traction power electronics for electric locomotives.
• High-voltage instruments and devices.
• Fast-charging stations for electric vehicles.

Intellectual Property Summary:

Provisional patent application 63/717,887 filed November 7, 2024.

Stage of Development:

TRL 6

Licensing Status:

Available for licensing or collaboration.

Additional Information: