Improved ReRAM: A New Method for Memory Chip Manufacture

Background:

Chip manufacturers are actively pursuing the development of powerful, next-generation memory chips. One of these emerging technologies is ReRAM (resistive random access memory) which can preserve massive amounts of RAM data on a single chip even in the event of complete power loss. A challenge to the technology is the need for data-storing filaments to form precisely in the thin layers of dielectric oxide that are essential to ReRAM chip functionality.

Technology Overview:

A new method of producing ReRAM chips developed at SUNY Polytechnic Institute addresses this problem, making ReRAM chips more suitable for neuromorphic computer systems, AI, and other applications.

Key features:

• Dense non-volatile memory chip with ultra-fast processing times. 
• Unparalleled read/write reliability.
• Analog-like output that compliments neuromorphic computer systems.

How it works:

• Memory cell consists of a metal oxide switching layer sandwiched between two metal electrodes.
• An electrical charge from the electrodes creates, via oxidation, data-storing filaments in the switching layer.
• Specially coated electrode contacts and overhanging design of switching layer. allow for greater control of oxidation and properly formed filaments.

Advantages:

• Standard BEOL processing flow means faster chip production time.
• Fewer manufacturing steps for increased profitability.
• Reduced power consumption for end-users.

Intellectual Property Summary:

Patent application submitted, WO2020131179A2 

Licensing Status:

This technology is available for licensing.

Licensing Potential:

Development partner, Commercial partner