Applications of m-plane (1-100) 15R-silicon carbide and related substrates to eliminate defects in epitaxial films
A method of epitaxial growth of SiC substrates for use in semiconductors and other SiC devices Background: Products can be fabricated using epitaxy; this is a process where a crystalline layer is deposited on a crystalline substrate. Semiconductors can be fabricated through this method. Silicon Carbide (SiC) is a crystalline material existing in various...
Inventor(s): Michael Dudley, Guan Wang, Hui Chen, Yu Zhang
Keywords(s): Other Types of Intellectual Property
Category(s): Electronics and Electronic Materials, Campus > Stony Brook University