Nano-electrode Multi-well High-gain Avalanche Rushing Photoconductor (NEW-HARP)

Background:

Amorphous Selenium (a-Se), previously developed for photocopying machines, has become commercially used in x-ray photoconductors for Flat-Panel Detectors (FPDs). However, current FPDs are limited by degradation of low-dose imaging performance due to electronic noise. The energy required to generate an electron-hole pair in a-Se is extremely high and unreliable to constantly reproduce perfectly.

Technology Overview:

This technology is a Time of flight (TOF) detector including a scintillator, a common electrode, a pixel electrode, a multitude of insulating layers with a multitude of nano-pillars formed in a large group of insulating layers, and a nano-scale well structure between adjacent nano-pillars (where a-Se separates them). a-Se is used as the photoconductive material; this provides a radiation detector that solves the disadvantages of conventional detectors. The method of detection includes detecting the motion of holes throughout a region that includes a large amount of electrodes, insulating layers, and a substrate including nano-pillars. The a-Se is injected between adjacent nano-pillars when this technology is manufactured.

Advantages:

Ultra-fast photo response - ultra-high time resolution

Applications:

Solid-state Imaging detectors of ionizing Radiation - Amorphous selenium Radiation detectors

Intellectual Property Summary:

Patented

Stage of Development:

[US Patent 9,941,428](http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9941428.PN.&OS=PN/9941428&RS=PN/9941428)

Licensing Status:

Available for licensing.

Licensing Potential:

Development partner,Commercial partner,Licensing

Additional Information: