Technology - Various Architectures of ReRAM

Various Architectures of ReRAM

A novel technology that can help realize the promise of ReRAM for use as computer flash memory.


Resistive random-access memory (ReRAM) is a form of non-volatile random-access (RAM) computer memory. ReRAM operates by changing the resistance across a dielectric solid-state material. This involves generating defects in a thin oxide layer, known as oxygen vacancies, which can subsequently charge and drift under an electric field. A broad range of materials can be used for this. ReRAM has been considered a possible replacement for flash memory. Unfortunately, up to now ReRAM’s cost and performance benefits have not been sufficiently compelling for this to happen. 

Technology Overview:

This technology is a novel architecture that can help ReRAM overcome its existing limitations as flash computer memory. The conventional simple structure of ReRAM consists of two plates with an insulator (oxide material) between them. Decreasing various dimensions of a ReRAM also produces the same issues as other semiconductor devices. Their actual behavior may change due to different effects in the sub-nm range. This new technology consists of various architectures of ReRAM to deal this problem. This architecture will help increase ReRAM’s integration and driving capacity. 


•    Increases ReRAM’s integration and driving capacity.
•    Improves ReRAM’s ability to serve as computer flash memory.


The primary application for this technology is to enhance ReRAM’s utility as computer flash memory.

Intellectual Property Summary:

Know-how (Unpublished)

Stage of Development:

TRL 3 - Experimental proof of concept

Licensing Status:

This technology is available for licensing.

Licensing Potential:

This technology would be of interest to anyone involved in the manufacture of computers and computer components, in particular computer memory, including:
•    Computer manufacturers.
•    Computer memory manufacturers.
•    Computer research facilities.

Patent Information: