Deuterized Low-K Dielectric Materials for TDDB Mitigation

Background:

Low-k dielectrics are a class of materials used in the manufacture of nanoscale semiconductor devices. The problem with low-k dielectrics is that they are susceptible to a phenomenon known as time dependent dielectric breakdown (TDDB). TDDB, one of the most important and most studied failure mechanisms in Integrated Circuits, is caused when an electron accelerated by an electric field in the dielectric collides with a hydrogen atom in the structure and ejects it. This provides a conduction path that eventually renders the normally insulating dielectric conductive. TDDB decreases the overall performance of the low-k dielectric, which, in turn, decreases the overall performance of the semiconductor.

Technology Overview:

Researchers at SUNY Polytechnic Institute have developed a simple, scalable and inexpensive process to replace the hydrogen in low-k dielectrics with deuterium, a readily available material from nuclear reactors, to immensely improve semiconductor performance.

Advantages:

• Effective on any low-k dielectric that incorporate hydrogen
• Plug & play with current semi‑conductor chip infrastructure
• Increased performance

Applications:

• Semiconductors

Intellectual Property Summary:

Patent application submitted, US 62/882,335

Licensing Status:

This technology is available for licensing.

Licensing Potential:

Licensing, Development partner, Commercial partner