A solution to the problem of decreased semiconductor performance caused by time dependent dielectric breakdown (TDDB).
A simple, easily scalable and inexpensive process for replacing the hydrogen in low-k dielectrics with deuterium to improve semiconductor performance.
Background: Low-k dielectrics are a class of materials used in the manufacture of nanoscale semiconductor devices. The problem with low-k dielectrics is that they are susceptible to a phenomenon known as time dependent dielectric breakdown (TDDB). TDDB, one of the most important and most studied failure mechanisms in Integrated Circuits, is caused when an electron accelerated by an electric field in the dielectric collides with a hydrogen atom in the structure and ejects it. This provides a conduction path that eventually renders the normally insulating dielectric conductive. TDDB decreases the overall performance of the low-k dielectric, which, in turn, decreases the overall performance of the semiconductor.
• Effective on any low-k dielectric that incorporate hydrogen
• Increase performance
Intellectual Property Summary:
• Patent Pending US 62/882,335
Stage of Development:
• TRL 2
• Available for Licensing