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Metal-oxide infiltrated organic-inorganic hybrid resistive random-access memory (ReRAM) devices

­A resistive switching medium of organic-inorganic hybrid composite films for ReRAM devicesRSS.HDBackground> Background: <Resistive random‑access memory (ReRAM) is a type of memory device which relies on electrochemical processes to control the movement of nanoscale quantities of metal/metal ions across a dielectric/solid electrolyte medium....
Published: 8/21/2023   |   Inventor(s): Ashwanth Subramanian, Chang-Yong Nam
Category(s): Technology Classifications > Electronics and Electronic Materials, Technology Classifications > Material and Composites, Technology Classifications > Nanotechnology, Campus > Stony Brook University

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