A novel platform of positive-tone metal-containing resists for use in EUV lithography.
Positive-tone resists are required for the most demanding features in the fabrication of integrated circuits such as etching a “contact hole.” One challenge in the design of metal containing resists is the scarcity of resists that exhibit positive-tone behavior.
This technology describes the use 2-vinylbenzoate, 3-vinylbenzoate and 4-vinylbenzoate ligands in main-group metals that strongly absorb EUV (e.g. Sb, Sn, Te, Bi) as a means of producing positive-tone metal-containing resists. These ligands can be used to produce positive-tone, mono- and multinuclear complexes of highly EUV-absorbing main group metals.
• Excellent resolution
• Superior line edge-roughness (LER)
• High sensitivity
• Strong adhesion properties
• Able to create intricate patterns
• Semiconductor device fabrication
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Patent application filed in US 02-18-2025 19/104,670
• TRL 3
• https://en.wikipedia.org/wiki/Technology_readiness_level
This technology is available for licensing.