Technology - Thermal Interposers with Nano Structures

Thermal Interposers with Nano Structures

 This invention manages thermal challenges in increasingly high-power applications using metal nanostructures with very high thermal conductivity


 Technology Overview:

 This invention manages thermal challenges in increasingly high power applications and “hot” chip packages. For microelectronics and laser companies using high power packages, Binghamton University thermal interposer technology provides a means for integrated circuits to dissipate heat and continue to operate reliably at elevated temperatures.  Metal nanostructures with very high thermal conductivity are designed to penetrate the surfaces they are brought against, thereby greatly reducing the interfacial resistance. This meshing enables a significant increase in power dissipation. Thermally conductive carbon or metal spheres, rods, spikes, and tubes with fin protrusions are suspended in an electrically insulating adhesive carrier along a compression axis. Fitting the nanostructures between the chip and the heat sink allows the construct to more closely match the Coefficients of Thermal Expansion and also reduce failure from cycling. Accordingly, the present invention provides an innovative improvement in conductive adhesives and anisotropic conductive adhesive interconnection technology by growing or attaching nano-structures to the interconnect particles and the microcircuit connect pads. .
Figure depicting nanostructures grown on filler material particles and heat sink to improve their contact within the anisotropic adhesive system

 Advantages:

 
  • Suitable replacement for a significant percentage of current TIM materials, including bulk Indium with metal nanostructures having fins or spikes in contact with each other, allowing heat to percolate through and out
  • Enables a significant increase in dissipation associated with increasingly high power electronics
  • Reduces interfacial resistance by an order of magnitude
  • Thermal grease can also be filled with interlocking nanostructures.

    Intellectual Property Summary:

     


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