SiC Lateral High Voltage Bi-directional Field Effect Transistor
This technology is a compact silicon carbide transistor that can conduct and block high voltages in both directions, improving efficiency and integration in power electronics for applications like inverters and converters.
Background:
Power electronics is a critical field that underpins a vast array of modern technologies, from renewable energy systems...
Published: 9/14/2026
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Inventor(s): Seung Yup Jang, Woongje Sung
Keywords(s): Technologies
Category(s): Campus > University at Albany, Technology Classifications > Semiconductor Devices and Manufacturing, Technology Classifications > Electronics
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Contrasting Time-Frequency Representations for Unknown Waveform Detection
This invention presents a novel discriminative model combining time and frequency domain features with cosine similarity loss to enhance the detection of unknown electromagnetic waveforms.
Background:
Accurately identifying unseen electromagnetic waveforms is a significant challenge in fields such as electronic warfare and spectrum management. Existing...
Published: 10/6/2026
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Inventor(s): Dola Saha, Xue Wei
Keywords(s): automated waveform analysis, Technologies
Category(s): Campus > University at Albany, Technology Classifications > Electronics, Technology Classifications > Wireless Technologies
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Template for Selective Area Growth of Group III-Nitride Devices
This technology improves the efficiency of group III-nitride LED devices and provides a better method for making them.
Background:
The field of solid-state lighting has seen significant advancements with the development of light-emitting diodes (LEDs), particularly those based on group III-nitride materials such as gallium nitride (GaN). These materials...
Published: 9/8/2026
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Inventor(s): Iulian Gherasoiu, Haralabos Efstathiadis
Keywords(s): buffer layer, III-Nitride semiconductors, micro-LED, optoelectronics, Selective Area Growth, Technologies
Category(s): Campus > SUNY Polytechnic Institute, Technology Classifications > Electronics
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Dual complementary four-switch three-phase inverters
This invention introduces a dual complementary four-switch, three-phase inverter design that improves efficiency, reduces size, and lowers costs in high-power applications.
Background:
Traditional three-phase inverters commonly use six-switch configurations, which tend to have higher current ripple and larger capacitance requirements. These limitations...
Published: 9/8/2026
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Inventor(s): Hui Zhang
Keywords(s): DC-link capacitor, Four-switch three-phase inverter, Imbalance compensation, SVPWM, Technologies, Three-phase inverter
Category(s): Campus > SUNY Oswego, Technology Classifications > Electronics, Technology Classifications > Energy
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Ga₂O₃ Vertical MOSFET for Enhanced Power Management
A vertical trench MOSFET using a unique in-situ Mg-doped current blocking layer to enable high-voltage operation with enhanced efficiency and robustness in power electronic devices.
Background:
This technology addresses the need for high-voltage power devices suitable for grid and traction applications, overcoming the limitations of traditional silicon-based...
Published: 10/7/2026
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Inventor(s): Uttam Singisetti, Hongping Zhao, Sudipto Saha, Lingyu Meng, Dong Yu
Keywords(s): Featured, Semiconductor and Microprocessing, Technologies
Category(s): Campus > University at Buffalo, Technology Classifications > Energy, Technology Classifications > Electronics
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Waveform Independent Tunable Channel Model for sub-Terahertz Communication
This technology uses a neural network to accurately model and adapt to hardware imperfections in sub-Terahertz wireless communication systems, enabling realistic simulations for designing and testing advanced, next-generation wireless networks without being limited to specific waveforms.
Background:
Sub-Terahertz (sub-THz) communication is an emerging...
Published: 6/29/2026
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Inventor(s): Dola Saha, Shuvam Chakraborty, Steven Arbogast, Claire Parisi, Ngwe Thawdar
Keywords(s): Technologies
Category(s): Campus > University at Albany, Technology Classifications > Electronics, Technology Classifications > Wireless Technologies
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Flexible Nanophotonic Cavity-Enhanced Infrared Photodetectors Employing Double Quantum Wells
Double-quantum-well infrared photodetectors (DQWIPs) integrated with nanophotonic cavities enable highly responsive mid-infrared detection through enhanced intersubband absorption in the thin semiconductor heterostructure. Additionally, the technology is compatible with flexible substrates.
Background:
Quantum Well Infrared Photodetectors (QWIPs)...
Published: 10/7/2026
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Inventor(s): Qiang Liu, Puspita Paul
Keywords(s): Imaging: Medical Imaging, Instrumentation, Night vision and thermal imaging, Optics, Research Tool, Sensors, Surveillance, Technologies
Category(s): Campus > University at Buffalo, Technology Classifications > Electronics, Technology Classifications > Engineering, Technology Classifications > Semiconductor Devices and Manufacturing, Technology Classifications > Quantum Computing
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Optomechanical Acoustic Particle Velocity Sensor
Inspired by biological hearing systems, this invention provides an ultrasensitive, low-noise, miniaturized optomechanical acoustic particle velocity sensor that detects weak velocity signals in confined spaces. By directly sensing acoustic particle velocity rather than pressure, it measures vector components of sound fields, enabling enhanced localization...
Published: 7/24/2026
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Inventor(s): Jian Zhou., Ronald Miles, Wanyin Zheng, Wei Sun, Xiangyu Wei
Keywords(s): Technologies
Category(s): Campus > Binghamton University, Technology Classifications > Electronics, Technology Classifications > Engineering
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Site-Specific Synthesis of 2D TMDs for High-Performance Nanoelectronic Devices
A lithographically defined, transfer-free CVD process enables site-specific growth of MoS₂ directly on CMOS-compatible SiO₂/Si substrates using patterned MoO₃ as both precursor and high-k dielectric. The approach delivers tunable crystallinity, improved interface quality, and enhanced FET performance while eliminating post-growth transfer and etching...
Published: 10/7/2026
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Inventor(s): Huamin Li, Fei Yao, Gabriel Lee, Keith Wong, Ajay Yadav, Chu-Te Chen, Anthony Cabanillas
Keywords(s): Materials & Chemicals, Semiconductor and Microprocessing, Technologies
Category(s): Campus > University at Buffalo, Technology Classifications > Electronics, Technology Classifications > Nanotechnology, Technology Classifications > Materials and Chemicals
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Phase-Controlled High Power Class AB MMIC Amplifier for X-Band Applications
This technology introduces a high-power Class AB monolithic microwave integrated circuit (MMIC) power amplifier designed for X-band radar and advanced communication systems. It is based on Gallium Nitride (GaN) on Silicon Carbide (SiC) technology, which provides high breakdown voltage and excellent thermal conductivity. This design improves load modulation,...
Published: 8/6/2026
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Inventor(s): Abdullah Eroglu, M.D. Tanvir
Keywords(s): MMIC Amplifiers, power semiconductor devices, radar, semiconductors, Technologies
Category(s): Campus > SUNY Polytechnic Institute, Technology Classifications > Electronics
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